Wave function-dependent mobility and suppression of interface roughness scattering in a strained SiGe p-channel field-effect structure

Applied Physics Letters

Volumn 76, Issue 18, 2000, Pages 2568-2570

  Sadeghzadeh, M A ^c   Horrell, A I ^a   Mironov, O A ^b   Parker, E H C ^c   Whall, T E ^c   Kearney, M J ^a  

^a LOUGHBOROUGH UNIVERSITY   (United Kingdom)

^b A USIKOV INSTITUTE OF RADIO PHYSICS AND ELECTRONICS   (Ukraine)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000971448     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126410     Document Type: Article

References (26)

1. M. Sukaki, IEEE J. Quantum Election. 22, 1845 (1986).
2. A. Kurobe, Semicond. Sci. Technol. 8, 742 (1993).
3. S. Verdonckt-Vandebroek, K. F. Crabbe, B. S. Meyerson, D. L. Harame, P. J. Restle, J. M. C. Stork, A. C. Megdanis, C. L. Stanis, A. A. Bright, G. M. W. Kroesen, and A. C. Warren, IEEE Electron Device Lett. 12, 447 (1991).
4. G. F. Niu, G. Ruan, T. Tang, and R. Kwor, in Proceedings of the 24th European Solid-State Device Research Conference (ESDRC 94), Edinburgh, edited by C. Hill and P. Ashburn (Editions Frontieres, 1994), p. 151
5. M. A. Sadeghzadeh, C. P. Parry, P. J. Phillips, E. C. H. Parker, and T. E. Whall, Appl. Phys. Lett. 74, 579 (1999).
6. C. J. Emeleus, T. E. Whall, D. W. Smith, R. A. Kubiak, E. H. C. Parker, and M. J. Kearney, J. Appl. Phys. 73, 3852 (1993).
7. A. Gold and W. Götze, J. Phys. C 14, 4049 (1981); Phys. Rev. B 33, 2495 (1986).
8. A. Gold and W. Götze, J. Phys. C 14, 4049 (1981); Phys. Rev. B 33, 2495 (1986).
9. M. J. Kearney and A. I. Horrell, Semicond. Sci. Technol. 14, 211 (1999).
10. T. Ando, A. H. Fowler, and P. Stern, Rev. Mod. Phys. 54, 437 (1982).
11. R. M. Feenstra and M. A. Lutz, J. Appl. Phys. 78, 6091 (1995).
12. A. Gold and V. T. Dolgopolov, Phys, Rev. B 33, 1076 (1986).
13. M. J. Kearney and A. I. Horrell, Semicond. Sci. Technol. 13, 174 (1998).
14. R. J. P. Lander, M. J. Kearney, A. I. Horrell, E. H. C. Parker, P. J. Phillips, and T. F. Whall, Semicond. Sci. Technol. 12, 1064 (1997).
15. M. A. Sadeghzadeh, O. A. Mironov, C. J. Emeleus, C. P. Parry, P. J. Phillips, F. H. C. Parker, and T. E. Whall, Acta Phys. Pol. A 94, 503 (1998).
16. T. E. Whall and E. H. C. Parker, J. Phys. D: Appl. Phys. 31, 1397 (1998).
17. H. Sakaki, T. Noda, K. Hirakawa, M. Tanaka, and T. Matsusue, Appl. Phys. Lett. 51, 1934 (1987).
18. R. Hull, J. M. Gibson, and J. C. Bean, Appl. Phys. Lett. 46, 179 (1989).
19. A. R. Powell, D. K. Bowen, M. Ormington, R. A. Kubiak, E. H. C. Parker, J. Hudson, and P. D. Augustus, Semicond. Sci. Technol. 7, 627 (1992).
20. U. Penner, H. Rucker, and I. N. Yassievich, Semicond. Sci. Technol. 13, 709 (1998).
21. Y. Xie, R. People, J. C. Bean, and K. W. Vecht, Appl. Phys. Lett. 49, 283 (1986).
22. Y. Xie, R. People, J. C. Bean, and K. W. Vecht, J. Vac. Sci. Technol. B 5, 744 (1987).
23. O. A. Mironov, V. I. Khizny, G. Braithwaite, E. H. C. Parker P. J. Phillips, T. E. Whall, and V. P. Gnezdilov, J. Cryst. Growth 157, 382 (1995).
24. V. I. Khizhny, O. A. Mironov, E. H. C. Parker, P. J. Phillips, T. E. Whall, and M. J. Kearney, Appl. Phys. Lett. 69, 960 (1996).
25. G. Braithwaite, N. L. Mattey, E. H. C. Parker, T. E. Whall, G. Brunthaler, and G. Bauer, J. Appl. Phys. 81, 6853 (1997).
26. S. de Gironcoli and E. Molinari (private communication).