Characterization of inversion-layer capacitance of holes in Si MOSFET's

IEEE Transactions on Electron Devices

Volumn 46, Issue 7, 1999, Pages 1446-1450

  Takagi, Shin Ichi ^a,b   Takayanagi, Mariko ^a,b   Toriumi, Akira ^a,b  

^a IEEE   (Japan)

^b TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

INVERSION LAYER CAPACITANCE;

CAPACITANCE; GATES (TRANSISTOR); SEMICONDUCTING SILICON;

MOSFET DEVICES;

EID: 0032662219     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.772489     Document Type: Article

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