Electron mobility characteristics of n-channel metal-oxide-semiconductor field-effect transistors fabricated on Ge-rich single- and dual-channel SiGe heterostructures

Journal of Applied Physics

Volumn 95, Issue 3, 2004, Pages 1550-1555

  Lee, Minjoo L ^a   Fitzgerald, Eugene A ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH FROM MELT; CRYSTAL ORIENTATION; ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; HETEROJUNCTIONS; HOLE MOBILITY; MOSFET DEVICES; SEMICONDUCTOR GROWTH; THICKNESS MEASUREMENT; TRANSMISSION ELECTRON MICROSCOPY; ULTRAHIGH VACUUM;

CONDUCTION BAND; DUAL CHANNEL HETEROSTRUCTURES; SINGLE CHANNEL HETEROSTRUCTURES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 1142292360     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1638610     Document Type: Article

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