Physical Mechanism for High Hole Mobility in (110)-Surface Strained- and Unstrained-MOSFETs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 809-812

  Mizuno, T ^a   Sugiyama, N ^a   Tezuka, T ^a   Moriyama, Y ^a   Nakaharai, S ^a   Maeda, T ^a   Takagi, S ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC FIELDS; ELECTRON SCATTERING; HOLE MOBILITY; MOLECULAR ORIENTATION; OPTIMIZATION; OXIDATION; PHONONS; QUANTUM THEORY; SILICON ON INSULATOR TECHNOLOGY; SURFACE ROUGHNESS; THERMAL EFFECTS; THIN FILMS; THRESHOLD VOLTAGE; TRANSCONDUCTANCE; TRANSMISSION ELECTRON MICROSCOPY;

CHANNEL SURFACE ORIENTATION; DRAIN CURRENT FLOW;

MOSFET DEVICES;

EID: 0842288174     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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