Nonstationary electron/hole transport in sub-0.1 /xm mos devices: correlation with mobility and low-power cmos application

IEEE Transactions on Electron Devices

Volumn 48, Issue 2, 2001, Pages 338-343

  Ohba, Ryuji ^a   Mizuno, Tomohisa ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

CMOS; Mobility; MOSFET; Nonstationary; Overshoot; Si; SOI; Velocity

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; CMOS INTEGRATED CIRCUITS; ELECTRON TRANSPORT PROPERTIES; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

VELOCITY OVERSHOOT CHARACTERISTICS;

MOSFET DEVICES;

EID: 0035249213     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.902736     Document Type: Article

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