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Applied Physics Letters

Volumn 79, Issue 25, 2001, Pages 4246-4248

Hole mobility enhancements in strained Si/Si1-yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1-xGex (x

(6) Leitz, C W a Currie, M T a Lee, M L a Cheng, Z Y a Antoniadis, D A a Fitzgerald, E A a

a Massachusetts Institute of Technology Cambridge (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035905291 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1423774 Document Type: Article

Times cited : (104)

References (19)

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