Mobility enhancement of SOI MOSFETs due to subband modulation in ultrathin SOI films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 3 SUPPL. B, 1998, Pages 1289-1294

  Takagi, Shin Ichi ^a   Koga, Junji ^a   Toriumi, Akira ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

Inter valley scattering; Inversion layer; Mobility; MOSFET; Phonon scattering; Size effect; SOI; Subband structure

Indexed keywords

EID: 0001191293     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1289     Document Type: Article

References (9)

1. M. R. Pinto, E. Sangiorgi and J. Bude: IEEE Electron Device Lett. 14 (1993) 375.
2. F. Stem: Phys. Rev. B 5 (1972) 4891.
3. S. Takagi, J. L. Hoyt, J. J. Welser and J. F. Gibbons: J. Appl. Phys. 80 (1996) 1567.
4. M. Shoji, Y. Ohmura and M. Tomizawa: J. Appl. Phys. 81 (1997) 786.
5. S. Takagi: to be published in VLSI Design.
6. S. Takagi, A. Toriumi. M. Iwase and H. Tango: IEEE Trans. Electron Devices 41 (1994) 2357.
7. T. Vogelsang and K. R. Hofmann: Appl. Phys. Lett. 63 (1993) 186.
8. P. J. Price: Ann. Phys. (N.Y.) 133 (1981) 217.
9. S. Takagi, A. Toriumi, M. Iwase and H. Tango: IEEE Trans. Electron Devices 41 (1994) 2363.