Thermal reaction of nickel and Si0.75Ge0.25 alloy

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 20, Issue 6, 2002, Pages 1903-1910

  Pey, K L ^a,b   Choi, W K ^a,c   Chattopadhyay, S ^c   Zhao, H B ^c   Fitzgerald, E A ^c,d   Antoniadis, D A ^c,d   Lee, P S ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c SINGAPORE MIT ALLIANCE   (Singapore)

^d MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; ANNEALING; AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; MOSFET DEVICES; NICKEL; REACTION KINETICS; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY; ULTRAHIGH VACUUM; X RAY DIFFRACTION ANALYSIS;

THERMAL REACTIONS;

SILICON ALLOYS;

EID: 0036864168     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1507339     Document Type: Article

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