A study of subband structure and transport of two-dimensional holes in strained Si p-MOSFETS using full-band modeling

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2002, Pages 727-730

  Nakatsuji, Hiroshi ^a   Kamakura, Yoshinari ^a   Taniguchi, Kenji ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; BAND STRUCTURE; COMPUTER SIMULATION; ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; FERMI LEVEL; HOLE MOBILITY; INTERFACES (MATERIALS); MONTE CARLO METHODS; POISSON EQUATION; SILICON; SURFACE ROUGHNESS;

FULL-BAND MODELING;

MOSFET DEVICES;

EID: 0036932386     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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