Investigating the relationship between electron mobility and velocity in deeply scaled NMOS via mechanical stress

IEEE Electron Device Letters

Volumn 22, Issue 12, 2001, Pages 591-593

  Lochtefeld, Anthony ^a,b   Antoniadis, Dimitri A ^a,b  

^a IEEE   (United States)

^b Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

Carrier velocity; Mobility enhancement; MOSFET mobility; Strained Si

Indexed keywords

UNIAXIAL STRESSES;

CAPACITANCE MEASUREMENT; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELD EFFECTS; ELECTRON MOBILITY; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; TRANSCONDUCTANCE;

MOSFET DEVICES;

EID: 0035696860     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.974587     Document Type: Article

References (13)

1. On experimental determination of carrier velocity in deeply scaled NMOS: How close to the thermal limit?
2. Estimation of the effects of remote charge scattering on electron mobility on n-MOSFET's with ultrathin gate oxides
3. Physical limitations and design for sub-0.1 μm MOS devices: Carrier velocity overshoot and performance fluctuations
4. Nonstationary electron/hole transport in sub-1.0 μm MOS devices: Correlation with mobility and low-power CMOS applications
5. Fabrication and analysis of deep submicron strained-Si N-MOSFET's
6. Strained Si NMOSFET's for high performance CMOS technology
7. On effective channel length in 0.1 mm MOSFET's
8. Two-dimensional doping profile characterization of MOSFET's by inverse modeling using I-V characteristics in the subthreshold region
9. Electron velocity overshoot at room and liquid nitrogen temperatures in silicon inversion layers
10. x structure and its FET performance by computer simulation
11. A graphical representation of the piezoresistive coefficients in silicon
12. On the mobility versus drain current relation for a nanoscale MOSFET