Growth of epitaxial CoSi2 on SiGe(001)

Journal of Applied Physics

Volumn 86, Issue 3, 1999, Pages 1355-1362

  Boyanov, B I ^a   Goeller, P T ^a   Sayers, D E ^a   Nemanich, R J ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COBALT COMPOUNDS; COMPOSITION EFFECTS; CRYSTAL ATOMIC STRUCTURE; CRYSTAL ORIENTATION; EPITAXIAL GROWTH; GERMANIUM; INTERFACIAL ENERGY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACE ROUGHNESS; THERMAL EFFECTS;

COBALT SILICIDE; SILICON GERMANIDE;

SEMICONDUCTING FILMS;

EID: 0032613719     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370894     Document Type: Article

References (24)

1. M. C. Ridgway, R. G. Elliman, N. Hauser, and J.-M. Baribeau, Mater. Res. Soc. Symp. Proc. 260, 857 (1992).
2. H. Ying, Z. Wang, D. B. Aldrich, D. E. Sayers, and R. J. Nemanich, Mater. Res. Soc. Symp. Proc. 320, 335 (1994).
3. F. Lin, G. Sarcona, M. K. Hatalis, A. F. Cserhati, E. Austin, and D. W. Greve, Thin Solid Films 250, 20 (1994).
4. G. P. Watson, D. Monroe, J.-Y. Cheng, E. A. Fitzgerald, Y.-H. Xie, and R. B. Vandover, Mater. Res. Soc. Symp. Proc. 320, 323 (1994).
5. Z. Wang, D. B. Aldrich, Y. L. Chen, D. E. Sayers, and R. J. Nemanich, Thin Solid Films 270, 555 (1995).
6. M. Glück, A. Schüppen, M. Rösler, W. Heinrich, J. Hersener, U. König, O. Yam, C. Cytermann, and M. Eizenberg, Thin Solid Films 270, 549 (1995).
7. P. T. Goeller, B. I. Boyanov, D. E. Sayers, and R. J. Nemanich, Mater. Res. Soc. Symp. Proc. 440, 487 (1997).
8. B. I. Boyanov, P. T. Goeller, D. E. Sayers, and R. J. Nemanich, J. Appl. Phys. 84, 4285 (1998).
9. S. M. Yalisove, R. T. Tung, and J. L. Batstone, Mater. Res. Soc. Symp. Proc. 116, 439 (1988).
10. J. R. Jimenez, L. M. Hsiung, K. Rajan, L. J. Schowalter, S. Hashimoto, R. D. Thompson, and S. S. Iyer, Appl. Phys. Lett. 57, 2811 (1990).
11. R. A. Donaton, K. Maex, A. Vantomme, G. Langouche, Y. Morciaux, A. St. Armour, and J. C. Strum, Appl. Phys. Lett. 70, 1266 (1997).
12. C. Schäffer and M. Rodewald, J. Cryst. Growth 165, 61 (1996).
13. B. I. Boyanov, P. T. Goeller, D. E. Sayers, and R. J. Nemanich, Appl. Phys. Lett. 71, 3060 (1997).
14. J. A. Floro and E. Chason, Appl. Phys. Lett. 69, 3830 (1996).
15. L. Haderbache, p. Wetzel, C. Pirri, J. C. Peruchetti, D. Bolmont, and G. Gewinner, Thin Solid Films 184, 317 (1990).
16. R. Stalder, C. Schwarz, H. Sirringhaus, and H. vön Kanel, Surf. Sci. 271, 355 (1992).
17. W. Wong-Ng, H. McMurdie, B. Paretzkin, C. Hubbard, and A. Dragoo, in JCPDS-ICDD PDF-2 Database, Ref. #38-1449 (1989).
18. S. P. Baker and E. Arzt, in Elastic Constants of SiGe in Properties of Strained and Relaxed Silicon Germanium, edited by E. Kasper (INSPEC: London, 1995), pp. 67-69.
19. G. Guénin, M. Ignat, and O. Thomas, J. Appl. Phys. 68, 6515 (1990).
20. P. T. Goeller (unpublished).
21. CRC Handbook of Chemistry and Physics, 64th ed. (Chemical Rubber Corp., Boca Raton, 1983) F176-F181.
22. M. F. Chisholm, N. D. Browning, S. J. Pennycook, R. Jebasinski, and S. Mantl, Appl. Phys. Lett. 64, 3608 (1994).
23. C. W. T. Bulle-Lieuwma, A. F. de Jong, and D. E. W. Vandenhoudt, Philos. Mag. A 64, 255 (1991).
24. D. Loretto, J. M. Gibson, and S. M. Yalisove, Phys. Rev. Lett. 63, 298 (1989).