DC and RF performance of 0.25 μm p-type SiGe MODFET

IEEE Electron Device Letters

Volumn 17, Issue 9, 1996, Pages 449-451

  Arafa, M ^a,b   Fay, P ^a,b   Ismail, K ^a,c,d   Chu, J O ^d   Meyerson, B S ^a,d   Adesida, I ^a,b  

^a IEEE

^b University of Illinois at Urbana Champaign   (United States)

^c CAIRO UNIVERSITY   (Egypt)

^d IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRON TRANSPORT PROPERTIES; GATES (TRANSISTOR); OHMIC CONTACTS; PERFORMANCE; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; TRANSCONDUCTANCE;

CUTOFF FREQUENCY; FREQUENCY OF OSCILLATION; HOLE CHANNEL; MAXIMUM EXTRINSIC TRANSCONDUCTANCE; METALLIZATION; MODFET DEVICES; UNITY CURRENT GAIN;

FIELD EFFECT TRANSISTORS;

EID: 0030241869     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.536289     Document Type: Article

References (11)

1. F. Schäffler, "Strained Si/SiGe heterostructures for divice applications," Solid-State Electron, vol. 37, p. 765, 1994.
2. K. Ismail, J. O. Chu, and B. S. Meyerson, "High hole mobility in SiGe alloys for device applications," Appl. Phys. Lett., vol. 64, P. 3124, 1994.
3. K. Ismail, B. S. Meyerson, and P. J. Wang, "High electron mobility in modulation doped Si/SiGe." Appl. Phys. Lett., vol. 58, p. 2117, 1991.
4. A. Sadek and K. Ismail, "Si/SiGe CMOS possibilities," Solid State Electron., vol. 38, p. 1731, 1995.
5. H. Deambkes, H.-J. Herzog, H. Jorke, H Kibbel, and E. Kasper, "The n-channel SiGe/Si modulation-doped field-effect transistor," IEEE Trans, Electron Devices, vol. ED-33, p. 633, 1986.
6. K. Ismail, S. Rishton, J. O. Chu, K. Chan, and B. S. Meyerson, "High-performance Si/SiGe n-type modulation-doped transistors," IEEE Electron Device Lett., vol. 14, p. 348, 1993.
7. 1-x modulation-doped FET," IEEE Electron Device Lett., vol. EDL-7. p. 308, 1986.
8. U. Köning and F. Schäffler, ̈P type SiGe channel modulation doped field-effect transistors with post-evaporation patterned submicrometer Schottky gates," Electron. Lett., vol. 29, p. 486, 1993.
9. V. P. Kesan, S. Subbanna, P. J. Restle, M. J. Tejwani, J. M. Altken, S. S. Iyer, and J. A. Ou, "High performance 0.25 μm p-MOSFET's with silicon-germanium channels for 300 K and 77 K operation," in IEDM '91 Tech. Dig., p. 25.
10. T room temperature SiGe quantum well p-MOSFET's," in 1993 Int. Semiconductor Device Res. Symp., p 349, 1993.
11. M. Arafa, P. Fay, K. Ismail, J. O. Chu, B. S Meyerson. and I. Adesida, "High speed p-type SiGe modulation-doped field-effect transistors," IEEE Electron Device Lett., vol. 17, p. 124, 1996.