Hole mobility enhancement in strained-Si p-MOSFETs under high vertical field

Solid-State Electronics

Volumn 41, Issue 12, 1997, Pages 1863-1869

  Maiti, Chinmay K ^a   Bera, L K ^a   Dey, S S ^a   Nayak, D K ^a,b   Chakrabarti, N B ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

^b ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; CHARGE CARRIERS; INTERFACES (MATERIALS); SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSCONDUCTANCE; VOLTAGE MEASUREMENT;

CARRIER CONFINEMENT; HOLE MOBILITY;

MOSFET DEVICES;

EID: 0031343435     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00152-4     Document Type: Article

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