Dislocation-free formation of relaxed SiGe-on-insulator layers

Applied Physics Letters

Volumn 80, Issue 19, 2002, Pages 3560-3562

  Tezuka, T ^a   Sugiyama, N ^a   Takagi, S ^a   Kawakubo, T ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BURIED OXIDE LAYERS; CROSSHATCH PATTERN; DISLOCATION-FREE; MESA STRUCTURE; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; RELAXED SIGE; RELAXED SIGE ON INSULATORS; SI SUBSTRATES; SI-ON-INSULATOR; SIGE-ON-INSULATOR; STRAIN-RELAXED; STRAINED-SOI; THREADING DISLOCATION; VIRTUAL SUBSTRATES;

GERMANIUM; MOSFET DEVICES; OXIDATION; SEMICONDUCTING SILICON; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON; SILICON ALLOYS; SILICON ON INSULATOR TECHNOLOGY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79955981936     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1479457     Document Type: Article

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