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Semiconductor Science and Technology

Volumn 17, Issue 7, 2002, Pages 708-715

Analysis of hole mobility and strain in a Si/Si0.5Ge0.5/Si metal oxide semiconductor field effect transistor

(7) Leadley, D R a Kearney, M J b Horrell, A I b Fischer, H c Risch, L c Parker, E H C a Whall, T E a

a UNIVERSITY OF WARWICK (United Kingdom)

b LOUGHBOROUGH UNIVERSITY (United Kingdom)

c INFINEON TECHNOLOGIES AG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; HOLE MOBILITY; INTERFACES (MATERIALS); MATHEMATICAL MODELS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; STRAIN; SURFACE ROUGHNESS; THERMOOXIDATION;

CAPACITANCE VOLTAGE PROFILING; CONDUCTION CHANNEL; OXIDE INTERFACE;

MOSFET DEVICES;

EID: 0036641857 PISSN: 02681242 EISSN: None Source Type: Journal
DOI: 10.1088/0268-1242/17/7/313 Document Type: Article

Times cited : (26)

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