SCOPUS 정보 검색 플랫폼

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 2, 2002, Pages 725-727

Relaxed SiGe-on-insulator fabricated via wafer bonding and etch back

(5) Taraschi, Gianni a,b Langdo, Thomas A a,b Currie, Matthew T a,b Fitzgerald, Eugene A a,b Antoniadis, Dimitri A a,b

a Massachusetts Institute of Technology Cambridge (United States)

b USA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CHEMICAL MECHANICAL POLISHING; CHEMICAL VAPOR DEPOSITION; FABRICATION; INTERDIFFUSION (SOLIDS); MOS DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; ULTRAHIGH VACUUM;

ETCH PIT DENSITY (EPD);

SILICON ON INSULATOR TECHNOLOGY;

EID: 0036504842 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.1463727 Document Type: Article

Times cited : (32)

References (24)

1
- 0028383440
- (1994) IEEE Electron Device Lett. , vol.15 , pp. 100
- Welser, J.J.¹ Hoyt, J.L.² Gibbons, J.F.³

2
- 0035395813
- (2001) IEEE Electron Device Lett. , vol.22 , pp. 321
- Cheng, Z.Y.¹ Currie, M.T.² Leitz, C.W.³ Taraschi, G.⁴ Fitzgerald, E.A.⁵ Hoyt, J.L.⁶ Antoniadis, D.A.⁷

3
- 0003168283
- edited by D. N. Schmidt (Electrochemical Society, Pennington, NJ)
- (1990) Silicon-on-Insulator Technology and Devices , pp. 61
- Abe, T.¹ Nakano, M.² Itoh, T.³

4
- 0029637854
- (1995) Electron. Lett. , vol.31 , pp. 1201
- Bruel, M.¹

5
- 0000472026
- (1997) Jpn. J. Appl. Phys., Part 1 , vol.36 , pp. 1636
- Bruel, M.¹ Aspar, B.² Auberton-Herve, J.³

6
- 0000360476
- (1998) Appl. Phys. Lett. , vol.72 , pp. 3485
- Fukatsu, S.¹ Ishikawa, Y.² Saito, T.³ Shibata, N.⁴

7
- 0033740561
- (2000) IEEE Electron Device Lett. , vol.21 , pp. 230
- Mizuno, T.¹ Takagi, S.² Sugiyama, N.³ Satake, H.⁴ Kurobe, A.⁵ Toriumi, A.⁶

8
- 0032607947
- (1999) Appl. Phys. Lett. , vol.75 , pp. 983
- Ishikawa, Y.¹ Shibata, N.² Fukatsu, S.³

9
- 0028404699
- (1994) Jpn. J. Appl. Phys., Part 1 , vol.33 , pp. 2372
- Xie, Y.H.¹ Fitzgerald, E.A.² Monroe, D.³ Watson, G.P.⁴ Silverman, P.J.⁵

10
- 0000059047
- (1998) Appl. Phys. Lett. , vol.72 , pp. 1718
- Currie, M.T.¹ Samavedam, S.B.² Langdo, T.A.³ Leitz, C.W.⁴ Fitzgerald, E.A.⁵

11
- 0000050637
- (1996) Phys. Rev. Lett. , vol.76 , pp. 3156
- Liu, F.¹ Lagally, M.G.²

12
- 0030736191
- (1997) Phys. Scr. T , vol.69 , pp. 92
- Larsen, A.N.¹ Kringhøj, P.²

13
- 36449008787
- (1993) Appl. Phys. Lett. , vol.62 , pp. 1363
- Ljungberg, K.¹ Söderbärg, A.² Bäcklund, Y.³

14
- 0008953773
- Electrochemical Society, Pennington, NJ
- (1987) Proceedings of the First International Symposium on Ultra Large Integration Science and Technology , pp. 798
- Davison, J.B.¹ Hoffman, J.G.²

15
- 0031624240
- (1998) Annu. Rev. Mater. Sci. , vol.28 , pp. 215
- Gösele, U.¹ Tong, Q.Y.²

16
- 0008921383
- (1994) Appl. Phys. Lett. , vol.62 , pp. 1363
- Tong, Q.Y.¹ Schmidt, E.² Gösele, U.³ Reiche, M.⁴

17
- 0026003541
- (1991) J. Electrochem. Soc. , vol.138 , pp. 341
- Maszara, W.P.¹

18
- 33644949327
- (1998) J. Appl. Phys. , vol.64 , pp. 4943
- Maszara, W.P.¹ Goetz, G.² Caviglia, A.³ McKitterick, J.B.⁴

19
- 0032293328
- Materials Research Society, Boston
- (1998) Proceedings of the Meeting on Microelectromechanical Structures for Materials Research , pp. 233
- Fitzgerald, E.A.¹ Wu, K.C.² Currie, M.T.³ Gerdsh, N.⁴ Brace, D.⁵ Borenstein, J.⁶

20
- 84975380190
- (1995) J. Electrochem. Soc. , vol.142 , pp. 1260
- Cams, T.K.¹ Tanner, M.O.² Wang, K.L.³

21
- 0000826849
- (1996) Appl. Phys. Lett. , vol.68 , pp. 1975
- Klauk, H.¹ Jackson, T.N.² Nelson, S.F.³ Chu, J.O.⁴

22
- 0004005306
- Wiley, New York
- (1981) Physics of Semiconductor Devices
- Sze, S.M.¹

23
- 0023295556
- (1987) J. Electrochem. Soc. , vol.134 , pp. 404
- Palik, E.D.¹ Glembocki, O.J.² Heard, I.³

24
- 0025521074
- (1990) J. Electrochem. Soc. , vol.137 , pp. 3612
- Seidel, H.¹ Csepregi, L.² Heuberger, A.³ Baumgartel, H.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.