Transconductance enhancement in deep submicron strained-Si n-MOSFETs

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 707-710

  Rim, Kern ^a   Hoyt, Judy L ^a   Gibbons, James F ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; ELECTRON TRANSPORT PROPERTIES; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

HIGH CHANNEL DOPING; STRAIN-INDUCED ENHANCEMENTS;

MOSFET DEVICES;

EID: 0032254846     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)