Group IVB metal oxides high permittivity gate insulators deposited from anhydrous metal nitrates

IEEE Transactions on Electron Devices

Volumn 48, Issue 10, 2001, Pages 2348-2356

  Ma, Tiezhong ^a   Campbell, Stephen A ^a   Smith, Ryan ^a   Hoilien, Noel ^a   He, Boyong ^a   Gladfelter, Wayne L ^a   Hobbs, Christopher ^b   Buchanan, Doug ^c   Taylor, Charles ^a   Gribelyuk, Michael ^c   Tiner, Mike ^b   Coppel, Matthew ^c   Lee, Jang Jung ^b  

^a University of Minnesota   (United States)

^b MOTOROLA INC   (United States)

^c IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Ceramics; CVD; Dielectric films; Hafnium compounds; Insulated gate FETs; MIS devices; Titanium compounds; Zirconium compounds

Indexed keywords

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; DIELECTRIC FILMS; FIELD EFFECT TRANSISTORS; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); MIS DEVICES; PERMITTIVITY; SEMICONDUCTING SILICON; SILICA; TITANIUM DIOXIDE; ZIRCONIA;

AMORPHOUS INTERFACIAL LAYER; ANHYDROUS METAL NITRATES; HIGH PERMITTIVITY GATE INSULATORS; LOW INVERSION LAYER MOBILITY;

GATES (TRANSISTOR);

EID: 0035472027     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.954476     Document Type: Article

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