HfO2 gate dielectrics on strained-Si and strained-SiGe layers

Semiconductor Science and Technology

Volumn 18, Issue 9, 2003, Pages 820-826

  Johansson, M ^a   Yousif, M Y A ^a   Lundgren, P ^a   Bengtsson, S ^a   Sundqvist, J ^b   Harsta A ^b   Radamson, H H ^c  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b UPPSALA UNIVERSITY   (Sweden)

^c ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; FILM GROWTH; INTERFACIAL ENERGY; LEAKAGE CURRENTS; POLYCRYSTALLINE MATERIALS; SUBSTRATES; THERMAL EFFECTS;

ATOMIC LAYER DEPOSITION (ALD);

DIELECTRIC DEVICES;

EID: 0141857601     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/9/302     Document Type: Article

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