Ion-assisted low-temperature oxidation for fabrication of strained Si1-xGex and Si1-x-yGexCy MOS capacitors

Semiconductor Science and Technology

Volumn 14, Issue 11, 1999, Pages 984-987

  Saha, C ^a   Ray, S K ^a   Lahiri, S K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHARGE CARRIERS; FILMS; HOLE TRAPS; INTERFACES (MATERIALS); IONS; LOW TEMPERATURE OPERATIONS; OXIDATION; REDUCTION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

CHARGE DENSITY; TRAP DENSITY; VALENCE BAND QUANTUM WELL;

MOS CAPACITORS;

EID: 0033344272     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/11/307     Document Type: Article

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