Ultrathin oxynitride films grown on Si0.74Ge0.26/Si heterolayers using low energy plasma source nitrogen implantation

Solid-State Electronics

Volumn 49, Issue 3, 2005, Pages 449-452

  Mahapatra, R ^a   Maikap, S ^a,b   Kar, G S ^a,c   Ray, S K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^c MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

Oxynitride; PSII; SiGe

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC BREAKDOWN OF SOLIDS; FILM GROWTH; HETEROJUNCTIONS; MICROWAVES; OXIDATION; PLASMA SOURCES; STRAIN;

OXYNITRIDES; PSII; SIGE; STRAIN RELAXATION;

ULTRATHIN FILMS;

EID: 12344262408     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.11.010     Document Type: Article

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