Mobility enhancement in surface channel SiGe PMOSFETs with HfO2 gate dielectrics

IEEE Electron Device Letters

Volumn 24, Issue 1, 2003, Pages 34-36

  Shi, Zhonghai ^a   Onsongo, David ^a   Onishi, Katsunori ^a   Lee, Jack C ^a   Banerjee, Sanjay K ^a  

^a The University of Texas at Austin   (United States)

Author keywords

HfO2 gate dielectrics; Mobility; PMOSFETs; Si1 xGex; Surface channel

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; HOLE MOBILITY; ION IMPLANTATION; MAGNETRON SPUTTERING; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS;

HAFNIUM DIOXIDE GATE DIELECTRICS; POLYSILICON MOSFET; SURFACE CHANNEL;

MOSFET DEVICES;

EID: 0037251169     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.807020     Document Type: Letter

References (7)

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