Oxidation-induced traps near SiO2/SiGe interface

Journal of Applied Physics

Volumn 86, Issue 3, 1999, Pages 1542-1547

  Ahn, C G ^a   Kang, H S ^a   Kwon, Y K ^a,b   Lee, S M ^a,c   Ryum, B R ^a,c   Kang, B K ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Uiduk University   (South Korea)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001092130     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370927     Document Type: Article

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