Atomic layer deposition of hafnium oxide and hafnium silicate thin films using liquid precursors and ozone

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 4, 2004, Pages 1175-1181

  Senzaki, Yoshihide ^a   Park, Seung ^a   Chatham, Hood ^a   Bartholomew, Lawrence ^a   Nieveen, Wesley ^b  

^a Aviza Technology Inc   (United States)

^b CHARLES EVANS AND ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION (ALD); GAS PHASE REACTIONS; POLYSILICON ELECTRODES; RAPID THERMAL PROCESSING;

ANNEALING; ATOMIC FORCE MICROSCOPY; CAPACITANCE; DIELECTRIC FILMS; HYSTERESIS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OZONE; SILICON WAFERS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VAPORIZATION; X RAY PHOTOELECTRON SPECTROSCOPY;

HAFNIUM COMPOUNDS;

EID: 4344563389     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1761186     Document Type: Article

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