High-temperature phase stability of hafnium aluminate films for alternative gate dielectrics

Journal of Applied Physics

Volumn 95, Issue 7, 2004, Pages 3772-3776

  Yang, Yan ^a   Zhu, Wenjuan ^b   Ma, T P ^b   Stemmer, Susanne ^a,c  

^a University of California   (United States)

^b Yale University   (United States)

^c IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PHASE STABILITY; SPINEL STRUCTURES;

ALUMINA; ALUMINUM; AMORPHOUS FILMS; ANNEALING; CRYSTALLIZATION; DIELECTRIC MATERIALS; ELECTRON DIFFRACTION; ELECTRON ENERGY LOSS SPECTROSCOPY; GRAIN SIZE AND SHAPE; MICROSTRUCTURE; TRANSMISSION ELECTRON MICROSCOPY; VAPOR DEPOSITION; X RAY DIFFRACTION ANALYSIS;

HAFNIUM COMPOUNDS;

EID: 1942542340     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1652240     Document Type: Article

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