Study on Zr-silicate interfacial layer of ZrO2 metal-insulator-semiconductor structure

Applied Physics Letters

Volumn 80, Issue 11, 2002, Pages 1987-1989

  Yamaguchi, Takeshi ^a   Satake, Hideki ^a   Fukushima, Noburu ^a   Toriumi, Akira ^b  

^a TOSHIBA CORPORATION   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EQUIVALENT OXIDE THICKNESS; INTERFACIAL LAYER; LOW LEAKAGE; METAL INSULATOR SEMICONDUCTOR STRUCTURES; MIS CAPACITORS; PULSED-LASER ABLATION DEPOSITION; SELECTIVE ETCHING; SI SUBSTRATES; ULTRA-THIN;

DIELECTRIC PROPERTIES; METAL INSULATOR BOUNDARIES; MIS DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICATES; ZIRCONIUM ALLOYS;

ZIRCONIUM;

EID: 79955992826     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1454231     Document Type: Article

References (8)

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