Study of HfO2 films deposited on strained SI 1-xGex layers by atomic layer deposition

Journal of Applied Physics

Volumn 96, Issue 10, 2004, Pages 5478-5483

  Damlencourt, J F ^a   Weber, O ^b   Renault, O ^a   Hartmann, J M ^a   Poggi, C ^a   Ducroquet, F ^b   Billon, T ^a  

^a CEA GRENOBLE   (France)

^b INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; FLUORESCENCE; HAFNIUM COMPOUNDS; MOSFET DEVICES; SILICON COMPOUNDS; SURFACE TREATMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER DEPOSITION (ALD); CARRIER MOBILITY DEGRADATION; GATE OXIDE QUALITY; INTERFACIAL LAYERS;

THIN FILMS;

EID: 9944222572     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1805184     Document Type: Article

References (29)

1. T. Manku and A. Nathan, Phys. Rev. B 41, 2912 (1990).
2. K. Ismail, J. O. Chu, and B. S. Meyerson, Appl. Phys. Lett. 64, 3124 (1994).
3. D. Nayak, K. Kamjoo, J. C. S. Woo, J. S. Park, and K. L. Wang, Appl. Phys. Lett. 56, 66 (1990).
4. S. J. Kilpatrick, R. J. Jaccodine, and P. E. Thompson, J. Appl. Phys. 81, 8018 (1997).
5. G. D. Wilk and R. M. Wallace, Appl. Phys. Lett. 74, 2854 (1999).
6. L. F. Schneemeyer, R. B. Van Dover, and R. M. Flemming, Appl. Phys. Lett. 75, 196 (1999).
7. N. Barret, O. Renault, J.-F. Damlencourt, and F. Martin, J. Appl. Phys. (to be published).
8. O. Renault, D. Samour, J.-F. Damlencourt, D. Blin, F. Martin, S. Marthon, N. T. Barrett, and P. Besson, Appl. Phys. Lett. 81, 3627 (2002).
9. C.-L. Liu, M. Stoker, R. I. Hegde, R. S. Rai, and J. P. Tobin, Mater. Res. Soc. Symp. Proc. 731, 281 (2002).
10. O. Renault, D. Samour, D. Rouchon, P. Holliger, A.-M. Papon, D. Blin, and S. Marthon, Thin Solid Films 428, 190 (2003).
11. M. Cho, J. Park, H. B. Park, C. S. Hwang, J. Jeong, and K. S. Hyun, Appl. Phys. Lett. 81, 334 (2002).
12. J.-M. Hartmann, V. Loup, G. Rolland, P. Holliger, F. Laugier, C. Vannuffel, and M.-N. Semeria, J. Cryst. Growth 236, 10 (2002).
13. R. People and J. C. Bean, Appl. Phys. Lett. 47, 322 (1985).
14. P. Mur, et al., Appl. Surf. Sci. 175/176, 726 (2001).
15. M. S. Carroll, J. C. Sturmand, and M. Yang, J. Electrochem. Soc. 147, 4652 (2000).
16. D. Tchikatilov, Y. F. Yang, and E. S. Yang, Appl. Phys. Lett. 69, 2578 (1996).
17. D. K. Nayak, K. Kamjoo, J. S. Park, C. S. Woo, and K. L. Wang, IEEE Trans. Electron Devices 39, 56 (1992).
18. D. Blin, S. Haukka, M. Viitanen, J.-F. Damlencourt, P. Holliger, and F. Martin, Proc. of ALD 2002, Séoul, Corea.
19. J. Aarik, A. Aidla, A.-A. Kiisler, T. Uustare, and V. Sammelselg, Thin Solid Films 340, 110 (1999).
20. F. J. Himpsel, F. R. McFeely, A. Taleb-Ibrahimi, J. A. Yarmoff, and G. Hollinger, Phys. Rev. B 38, 6084 (1988).
21. S. Sato, S. Nozaki, and H. Morisaki, J. Appl. Phys. 81, 1518 (1996).
22. Y. Wang, Y. Z. Hu, and E. A. Irene, J. Vac. Sci, Technol. A 12, 1309 (1994).
23. A. Agarwal, J. K. Patterson, J. E. Greene, and A. Rockett, Appl. Phys. Lett. 63, 518 (1993).
24. J.-F. Damlencourt et al., Solid-State Electron, 47, 1613 (2003).
25. E. P. Gusev et al., Tech. Dig. - Int. Electron Devices Meet. 2001, 451.
26. T. Ngai, X. Chen, J. Chen, and S. K. Banerjee, Appl. Phys. Lett. 80, 1773 (2002).
27. K. Onishi, C. S. Kang, R. Choi, H.-J. Cho, S. Gopalan, R. E. Nieh, S. A. Krishnan, and J. C. Lee, IEEE Trans. Electron Devices 50, 384 (2003).
28. O. Weber et al., Proceeding of the 2004 VLSI Technology Symposium, Honolulu, 2004, 42.
29. W. Zhu, J.-P. Han, and T. P. Ma, IEEE Trans. Electron Devices 51, 98 (2004).