Temperature Dependence of Channel Mobility in HfO2-Gated NMOSFETs

IEEE Electron Device Letters

Volumn 25, Issue 2, 2004, Pages 89-91

  Zhu, W J ^a,b   Ma, T P ^a  

^a YALE UNIVERSITY   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

Channel mobility; Coulomb scattering; High dielectrics; MOSFETs; Phonon scattering

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; HAFNIUM COMPOUNDS; INTEGRAL EQUATIONS; MATHEMATICAL MODELS; PERMITTIVITY; PHONONS; SEMICONDUCTOR MATERIALS; TRANSMISSION ELECTRON MICROSCOPY;

CHANNEL MOBILITY; COULOMB SCATTERING; PHONON SCATTERING;

MOSFET DEVICES;

EID: 1342286944     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.822648     Document Type: Article

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