Electrical properties of high-k HfO2 films on Si 1-xGex substrates

Microelectronic Engineering

Volumn 80, Issue SUPPL., 2005, Pages 222-225

  Joo Park, Tae ^a   Keun Kim, Seong ^a   Hwan Kim, Jeong ^a   Park, Jaehoo ^a   Cho, Moonju ^a   Woo Lee, Suk ^a   Hun Hong, Sug ^a   Seong Hwang, Cheol ^a  

^a Seoul National University   (South Korea)

Author keywords

HfO2; Interfacial reaction; SiGe

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CAPACITANCE; CARRIER MOBILITY; DIELECTRIC FILMS; ENERGY DISPERSIVE SPECTROSCOPY; HAFNIUM COMPOUNDS; HYSTERESIS; PERMITTIVITY; RAPID THERMAL ANNEALING; SUBSTRATES; SURFACE REACTIONS; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER DEPOSITION; CAPACITANCE EQUIVALENT THICKNESS (CET); FIELD EMISSION GUN; HFO2; INTERFACIAL REACTION; SIGE;

THIN FILMS;

EID: 19944416252     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.04.072     Document Type: Conference Paper

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