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Applied Physics Letters

Volumn 80, Issue 10, 2002, Pages 1773-1775

Improving SiO2/SiGe interface of SiGe p-metal-oxide-silicon field-effect transistors using water vapor annealing

(4) Ngai, T a Chen, X a Chen, J a Banerjee, S K a

a The University of Texas at Austin (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC HYDROGEN; CONTROL DEVICE; GATE OXIDE; LOW TEMPERATURES; OUTPUT CURRENT; P-MOSFETS; REMOTE PLASMA CHEMICAL VAPOR DEPOSITIONS; SUBTHRESHOLD SLOPE; ULTRA-THIN; WATER VAPOR ANNEALING;

ANNEALING; CHEMICAL VAPOR DEPOSITION; DANGLING BONDS; GERMANIUM; HYDROGEN; HYDROGEN BONDS; METAL ANALYSIS; MOSFET DEVICES; PLASMA DEPOSITION; SILICON ALLOYS; SILICON OXIDES; VANADIUM; WATER VAPOR;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79956051200 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1445806 Document Type: Article

Times cited : (9)

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