Thickness dependence of Weibull slopes of HfO2 gate dielectrics

IEEE Electron Device Letters

Volumn 24, Issue 1, 2003, Pages 40-42

  Kim, Young Hee ^a   Onishi, Katsunori ^a   Kang, Chang Seok ^a   Cho, Hag Ju ^a   Choi, Rino ^a   Krishnan, Siddarth ^a   Akbar, Mohammad Shahariar ^a   Lee, Jack C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

Gate dielectric; HfO2; MOS capacitor; Reliability; TDDB

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; ELECTRIC VARIABLES MEASUREMENT; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; MOS CAPACITORS; RELIABILITY; SILICA; WEIBULL DISTRIBUTION;

BREAKDOWN VOLTAGE DISTRIBUTION; HAFNIUM DIOXIDE GATE DIELECTRICS; WEIBULL SLOPES;

DIELECTRIC MATERIALS;

EID: 0037247412     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.807314     Document Type: Letter

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