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Journal of Applied Physics

Volumn 83, Issue 5, 1998, Pages 2835-2841

Wet oxidation of amorphous Si0.67Ge0.25C 0.08 grown on (100) Si substrates

(4) Bair, A E a,c Atzmon, Z a Alford, T L a Smith, David J b

a Arizona State University (United States)

b Center for Solid State Electronics Research (United States)

c STMicroelectronics USA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0345983964 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.367044 Document Type: Article

Times cited : (5)

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