Ultrathin HfO2 gate dielectrics on partially strain compensated SiGeC/Si heterostructure

Materials Science in Semiconductor Processing

Volumn 7, Issue 4-6 SPEC. ISS., 2004, Pages 203-208

  Ray, S K ^a   Mahapatra, R ^a   Maikap, S ^b,c   Dhar, A ^a   Bhattacharya, D ^a   Lee, Je Hun ^b  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

^b Seoul National University   (South Korea)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

HfO2; High k oxide; SiGeC

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CURRENT DENSITY; GATES (TRANSISTOR); POLYCRYSTALLINE MATERIALS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; STRAIN; TRANSMISSION ELECTRON MICROSCOPY; ULTRATHIN FILMS; X RAY DIFFRACTION ANALYSIS;

BAND GAPS; GATE DIELECTRICS; INTERFACIAL LAYERS;

HETEROJUNCTIONS;

EID: 9544240369     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.09.015     Document Type: Conference Paper

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