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Volumn 4, Issue 3, 2001, Pages
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Enhanced passivation of the oxide/SiGe interface of SiGe epitaxial layers on Si by anodic oxidation
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Author keywords
[No Author keywords available]
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Indexed keywords
ANODIC OXIDATION;
AUGER ELECTRON SPECTROSCOPY;
CRYSTAL LATTICES;
ELECTROCHEMISTRY;
ELECTRON ENERGY LOSS SPECTROSCOPY;
EPITAXIAL GROWTH;
FOURIER TRANSFORM INFRARED SPECTROSCOPY;
INTERFACES (MATERIALS);
OXIDES;
PASSIVATION;
PHOTOLUMINESCENCE;
X RAY PHOTOELECTRON SPECTROSCOPY;
ELECTROCHEMICAL OXIDATION;
NONRADIATIVE RECOMBINATION;
RAPID THERMAL OXIDATION;
SILICON GERMANIUM;
THERMAL OXIDATION;
SEMICONDUCTING SILICON COMPOUNDS;
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EID: 0035296676
PISSN: 10990062
EISSN: None
Source Type: Journal
DOI: 10.1149/1.1347816 Document Type: Article |
Times cited : (9)
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References (18)
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