Physical and electrical properties of ultrathin HfO2/HfSi xOy stacked gate dielectrics on compressively strained-Si0.74Ge0.26/Si heterolayers

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 1, 2004, Pages 52-56

  Maikap, S ^a,d   Lee, Je Hun ^a   Kim, Doh Y ^a   Mahapatra, R ^b   Ray, S K ^b   Song, Jae Hoon ^c   No, Y S ^c   Choi, Won Kook ^c  

^a Seoul National University   (South Korea)

^b INDIAN INSTITUTE OF TECHNOLOGY   (India)

^c Korea Inst Sci/T Cheongryang   (South Korea)

^d INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPACTION; CURRENT DENSITY; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; ELECTRON TUNNELING; INTERFACES (MATERIALS); PERMITTIVITY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR MATERIALS; SILICATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY;

CURRENT STRESS; HETEROLAYERS; LOW CHARGE TRAPPING;

HAFNIUM COMPOUNDS;

EID: 1642268821     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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