Effects of traps on charge storage characteristics in metal-oxide-semiconductor memory structures based on silicon nanocrystals

Journal of Applied Physics

Volumn 84, Issue 4, 1998, Pages 2358-2360

  Shi, Yi ^a,b   Saito, Kenichi ^a   Ishikuro, Hiroki ^a   Hiramoto, Toshiro ^a,c  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b NANJING UNIVERSITY   (China)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001182140     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368346     Document Type: Article

References (11)

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