Ge diffusion in Ge metal oxide semiconductor with chemical vapor deposition HfO 2 dielectric

Applied Physics Letters

Volumn 87, Issue 5, 2005, Pages

  Lu, N ^a   Bai, W ^a   Ramirez, A ^b   Mouli, C ^c   Ritenour, A ^d   Lee, M L ^d   Antoniadis, D ^d   Kwong, D L ^a  

^a The University of Texas at Austin   (United States)

^b ADVANCED MICRO DEVICES   (United States)

^c MICRON TECHNOLOGY INC   (United States)

^d Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL PROPERTIES; EQUIVALENT OXIDE THICKNESS (EOT); GE DIFFUSION; METAL OXIDE SEMICONDUCTOR (MOS; SURFACE NITRIDATION;

CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; DIFFUSION; GERMANIUM; HAFNIUM COMPOUNDS; HYSTERESIS; INTERFACES (MATERIALS); LEAKAGE CURRENTS;

MOS DEVICES;

EID: 33645508747     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2001757     Document Type: Article

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