Effects of interfacial nitrogen on the structural and electrical properties of ultrathin ZrO2 gate dielectrics on partially strain-compensated SiGeC/Si heterolayers

Applied Physics Letters

Volumn 82, Issue 24, 2003, Pages 4331-4333

  Mahapatra, R ^a   Maikap, S ^a,b   Lee, Je Hun ^a,b   Kar, G S ^a   Dhar, A ^a   Hwang, Nong M ^a,b   Kim, Doh Y ^a,b   Mathur, B K ^a   Ray, S K ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

^b Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC BREAKDOWN; HETEROJUNCTIONS; INTERFACES (MATERIALS); NITROGEN; SECONDARY ION MASS SPECTROMETRY; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIA;

PLASMA TREATMENT;

DIELECTRIC MATERIALS;

EID: 0038450094     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1583143     Document Type: Article

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