Fast and long retention-time nano-crystal memory

IEEE Transactions on Electron Devices

Volumn 43, Issue 9, 1996, Pages 1553-1558

  Hanafi, Hussein I ^a   Tiwari, Sandip ^a   Khan, Imran ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); NANOSTRUCTURED MATERIALS; NONVOLATILE STORAGE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

CURRENT SENSING; DISTRIBUTED FLOATING GATE REGION; ELECTRON CHARGE; RETENTION TIME; SINGLE TRANSISTOR MEMORY STRUCTURE; THRESHOLD VOLTAGE;

SEMICONDUCTOR STORAGE;

EID: 0030241362     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.535349     Document Type: Article

References (9)

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