Oxidation of Si1-x-yGQxCy strained layers grown on Si: Kinetics and interface properties

Microelectronics Reliability

Volumn 40, Issue 4-5, 2000, Pages 829-832

  Cuadras, A ^a   Garrido, B ^a   Bonafos, C ^a   Morante, J R ^a   Fonseca, L ^b   Pressel, K ^c  

^a UNIVERSITY OF BARCELONA   (Spain)

^b UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^c IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; SECONDARY ION MASS SPECTROMETRY; THERMOOXIDATION; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

CRYSTALLINITY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033733162     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0026-2714(99)00317-0     Document Type: Article

References (10)

1. Johnson RA, Zierak MZ, Outama KB, Bahn TC, Joseph AJ, Cordero CN, Malinowski J, Bard KA, Weeks T, Milliken R, Medve T, May G, Chong W, Walter K, Tempest SL, Chau B, Boenke M, Nelson M, Harame D. International Electronic Device Meeting Proceedings. 1998. p. 217.
2. Knoll D, Heinemann B, Osten HJ, Ehwald KE, Tillack B, Schley P, Barth R, Matthes M, Park KS, Kim Y, Winkler W. International Electronic Device Meeting Proceedings. 1998. p. 703.
3. Köck G, Glück M, Hackbarth T, Herzog H, Kohn E. Thin Solid Films 1998;336:141.
4. Osten HJ. Materials Science and Engineering 1996;B36:268.
5. Osten HJ, Lippert G, Gaworzewski P, Sorge R. Appl Phys Lett 1997;71:1522.
6. Ismail K, Chu JO, Meyerson BS. Appl Phys Lett 1994;64:3125.
7. Xiang J, Herbots N, Jacobson H, Ye PE, Whaley S. J Appl Phys 1996;80:1857.
8. Pressel K, Garrido B, Franz M, Krüger D, Osten HJ, Morante JR. Journal of Vacuum Science and Technology B 1998;16:1757.
9. Cuadras A, Garrido B, Bonafos C, Morante JR, Fonseca L, Pressel K. E-MRS (Symp P). June 1999.
10. Garrido B, Cuadras A, Bonafos C, Morante JR, Fonseca L, Pressel K. INFOS. June 1999.