Hole and electron mobility enhancement in strained SiGe vertical MOSFETs

IEEE Transactions on Electron Devices

Volumn 48, Issue 9, 2001, Pages 1975-1980

  Chen, Xiangdong ^b   Liu, Kou Chen ^b   Ouyang, Qiqing Christine ^b   Jayanarayanan, Sankaran Kartik ^b   Banerjee, Sanjay Kumar ^a,b  

^a IEEE

^b The University of Texas at Austin   (United States)

Author keywords

Bandgap engineering; Electron and hole mobility enhancement; Vertical MOSFET

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC CURRENTS; ENERGY GAP; HOLE MOBILITY; ION IMPLANTATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS;

BANDGAP ENGINEERING; DRAIN CURRENT;

MOSFET DEVICES;

EID: 0035446156     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.944185     Document Type: Article

References (24)

1. CMOS scaling into the nanometer regime
2. The challenges in achieving sub-100 nm MOSFET's
3. Band structure, deformation potentials, and carrier mobility in strained Si, Ge and SiGe alloys
4. Silicon-germanium heterostructures - Advanced materials and devices for silicon technology
5. x
6. Hole transport investigation in unstrained and strained SiGe
7. x
8. y channel
9. x/Si quantum well heterostructures using a MOS capacitor
10. 2 gate dielectric on SiGe
11. Nanoscale ultra-thin-body silicon-on-insulator PMOSFET with a SiGe/Si heterostructure channel
12. SiGe-channel heterojunction P-MOSFET's
13. y substrate
14. x alloys grown on Si (001) substrates
15. x pseudomorphic alloys matched to Si - Strain-related transport improvements
16. High-transconductance n-type Si/Si/Ge modulation-doped field effect transistors
17. Strained-Si heterostructure field effect transistors
18. x/Si vertical PMOSFET fabricated by Ge ion implantation
19. Vertical MOS transistors with 70-nm channel length
20. x MOSFET's
21. Reliability of vertical MOSFET's for gigascale memory applications
22. A vertical MOSFET with a leveling, surrounding gate fabricated on a nanoscale island
23. SiGe heterojunection vertical p-type metal-oxide-semiconductor field effect transistors with Si cap
24. x channel pMOSFET's