Change in the chemical state and thermal stability of HfO 2 by the incorporation of Al 2O 3

Applied Physics Letters

Volumn 84, Issue 4, 2004, Pages 571-573

  Cho, M H ^a   Chang, H S ^a   Cho, Y J ^a   Moon, D W ^a   Min, K H ^b   Sinclair, R ^b   Kang, S K ^c   Ko, D H ^c   Lee, J H ^d   Gu, J H ^d   Lee, N I ^d  

^a Korea Research Institute of Standards and Science   (South Korea)

^b Stanford University   (United States)

^c Yonsei University   (South Korea)

^d SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL STATES; NANOLAMINATES;

ALUMINA; BAND STRUCTURE; CAPACITANCE; CHARGE TRANSFER; DEPOSITION; FILM GROWTH; GATES (TRANSISTOR); MATHEMATICAL MODELS; NANOSTRUCTURED MATERIALS; POLYCRYSTALLINE MATERIALS; STOICHIOMETRY; STRUCTURE (COMPOSITION); SURFACE CHEMISTRY; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; ULTRATHIN FILMS;

HAFNIUM COMPOUNDS;

EID: 10744226117     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1633976     Document Type: Article

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