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Applied Physics Letters

Volumn 87, Issue 7, 2005, Pages

Impact of Ge on integration of Hf O2 and metal gate electrodes on strained Si channels

(6) Lin, Yanxia a Öztürk, Mehmet C a Chen, Bei a Rhee, Se Jong b Lee, Jack C b Misra, Veena a

a North Carolina State University (United States)

b The University of Texas at Austin (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRICS; GATE ELECTRODES; INTERFACE TRAP DENSITY; LEAKAGE CURRENT DENSITY;

CAPACITORS; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; ELECTROCHEMICAL ELECTRODES; GERMANIUM; HAFNIUM; INTERFACES (MATERIALS); LEAKAGE CURRENTS; RUTHENIUM ALLOYS; ULTRAHIGH VACUUM;

GATES (TRANSISTOR);

EID: 24144438631 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2009809 Document Type: Article

Times cited : (8)

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