Dielectric property and thermal stability of HfO2 on silicon

Applied Physics Letters

Volumn 81, Issue 11, 2002, Pages 2041-2043

  Lin, Y S ^a   Puthenkovilakam, R ^a   Chang, J P ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER; DEVICE APPLICATION; EQUIVALENT OXIDE THICKNESS; FLAT-BAND VOLTAGE SHIFT; HAFNIUM OXIDE THIN FILMS; INTERFACIAL TRAPS; METAL OXIDE SEMICONDUCTOR; ORDERS OF MAGNITUDE; POST DEPOSITION ANNEALING;

AMORPHOUS FILMS; ATOMIC LAYER DEPOSITION; DEPOSITION; DIELECTRIC PROPERTIES; HAFNIUM; HAFNIUM OXIDES; SILICON COMPOUNDS; SILICON OXIDES; THERMODYNAMIC STABILITY; ZIRCONIA; ZIRCONIUM;

OXIDE FILMS;

EID: 79956040381     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1506207     Document Type: Article

References (31)

1. The International Technology Roadmap For Semiconductors, 2001 ed. (International Sematch, Austin, TX, 2001).
2. S. A. Campbell, T. Z. Ma, R. Smith, W. L. Gladfelter, and F. Chen, Microelectron. Eng. 59, 361 (2001). mie MIENEF 0167-9317
3. L. Kang, B. H. Lee, W.-J. Qi, Y. Jeon, R. Nieh, S. Gopalan, K. Onishi, and J. C. Lee, IEEE Electron Device Lett. 21, 181 (2000). edl EDLEDZ 0741-3106
4. S. J. Lee, H. F. Luan, W. P. Pai, C. H. Lee, T. S. Jeon, Y. Senzaki, D. Roberts, and D. K. Kwong, Tech. Dig. Int. Electron Devices Meet. 35, 31 (2000). tcd TDIMD5 0163-1918
5. A. Callegari, E. Cartier, M. Gribelyuk, H. F. Okom-Schmidt, and T. Zabel, J. Appl. Phys. 90, 6466 (2001). jap JAPIAU 0021-8979
6. W. J. Zhu, T. P. Ma, T. Tamagawa, J. Kim, and Y. Di, IEEE Electron Device Lett. 23, 97 (2002). edl EDLEDZ 0741-3106
7. G. D. Wilk and R. M. Wallace, Appl. Phys. Lett. 74, 2854 (1999). apl APPLAB 0003-6951
8. B. C. Hendrix, A. S. Borovik, C. Xu, J. F. Roeder, T. H. Baum, M. J. Bevan, M. R. Visokay, J. J. Chambers, A. L. Rotondaro, H. Bu, and L. Colombo, Appl. Phys. Lett. 80, 2362 (2002). apl APPLAB 0003-6951
9. M. R. Visokay, J. J. Chambers, A. L. Rotondaro, A. Shanware, and L. Colombo, Appl. Phys. Lett. 80, 3183 (2002). apl APPLAB 0003-6951
10. S. Zafar, E. Cartier, and E. P. Gusev, Appl. Phys. Lett. 80, 2749 (2002). apl APPLAB 0003-6951
11. B. K. Park, J. Park, M. Cho, C. S. Hwang, K. Oh, Y. Han, and D. Y. Yang, Appl. Phys. Lett. 80, 2368 (2002). apl APPLAB 0003-6951
12. Y. Ohshita, A. Ogur, A. Hoshino, S. Hiiro, and H. Machida, J. Cryst. Growth 233, 192 (2001). jcr JCRGAE 0022-0248
13. Y. J. Cho, N. V. Nguyen, C. A. Richter, J. R. Ehrstein, B. H. Lee, and J. C. Lee, Appl. Phys. Lett. 80, 1249 (2002). apl APPLAB 0003-6951
14. M. Quevedo-Lopez, M. El-Bouanani, S. Addepalli, J. L. Duggan, B. E. Gnade, R. M. Wallace, M. R. Visokay, M. Douglas, and L. Colombo, Appl. Phys. Lett. 79, 4192 (2001). apl APPLAB 0003-6951
15. A. Callegari, E. Cartier, M. Gribelyuk, H. F. Okorn-Schmidt, and T. R. Zabel, J. Appl. Phys. 90, 6466 (2001). jap JAPIAU 0021-8979
16. S. Miyake, I. Shimizu, R. R. Manory, T. Mori, and G. Kimmel, Surf. Coat. Technol. 146, 237 (2001). sct SCTEEJ 0257-8972
17. J. Robertson, J. Vac. Sci. Technol. B 18, 1785 (2000). jvb JVTBD9 0734-211X
18. H. Lee, S. Jeon, and H. Hwang, Appl. Phys. Lett. 79, 2615 (2001). apl APPLAB 0003-6951
19. Z. Xu, M. Houssa, S. De Gendt, and M. Heyns, Appl. Phys. Lett. 80, 1975 (2002). apl APPLAB 0003-6951
20. L. Kang, K. Onishi, Y. Jeon, B. H. Lee, C. Kang, W.-J. Qi, R. Nieh, S. Gopalan, R. Choi, and J. C. Lee, Tech. Dig. Int. Electron Devices Meet. 35, 244 (2000). tcd TDIMD5 0163-1918
21. P. D. Krisch, C. S. Kang, J. Lozano, J. C. Lee, and J. G. Ekerdt, J. Appl. Phys. 91, 4353 (2002). jap JAPIAU 0021-8979
22. J. P. Chang and Y.-S. Lin, Appl. Phys. Lett. 79, 3824 (2001). apl APPLAB 0003-6951
23. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 87, 484 (2000). jap JAPIAU 0021-8979
24. Z. Song, X. Bao, U. Wild, M. Muhler, and G. Ertl, Appl. Surf. Sci. 134, 31 (1998). asu ASUSEE 0169-4332
25. L. J. Whitman, S. A. Joyce, J. A. Yarmoff, F. R. Mcfeely, and L. J. Tereminello, Surf. Sci. 232, 297 (1990). sus SUSCAS 0039-6028
26. C. C. Cheng, K. V. Guinn, V. M. Donnelly, and I. P. Herman, J. Vac. Sci. Technol. A 12, 2630 (1994). jva JVTAD6 0734-2101
27. T. S. Jeon, J. M. White, and D. L. Kwong, Appl. Phys. Lett. 78, 368 (2001). apl APPLAB 0003-6951
28. S. Desgreniers and K. Lagarec, Phys. Rev. B 59, 8467 (1999). prb PRBMDO 0163-1829
29. J. E. Lowther, J. W. Dewhurst, J. M. Leger, and J. Haines, Phys. Rev. B 60, 14485 (1999). prb PRBMDO 0163-1829
30. I. Brian and O. Knacke, Thermochemical Properties of Inorganic Substances (Springer, New York, 1993).
31. I. Brian, O. Knacke, and O. Kubaschewski, Thermochemical Properties of Inorganic Substances, Supplement (Springer, New York, 1997).