Characterization of thin ZrO2 films deposited using Zr(Oi-Pr)2(thd)2 and O2 on Si(100)

Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films

Volumn 20, Issue 3, 2002, Pages 1145-1148

  Chen, H W ^a   Landheer, D ^b   Wu, X ^b   Moisa, S ^b   Sproule, G I ^b   Chao, T S ^a   Huang, T Y ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL ACTIVATION; DEPOSITION; ELECTRIC PROPERTIES; LEAKAGE CURRENTS; ORGANOMETALLICS; OXYGEN; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY; ZIRCONIA; ZIRCONIUM COMPOUNDS;

CAPACITANCE VOLTAGE CHARACTERISTICS; DEPOSITION CHAMBER; EQUIVALENT OXIDE THICKNESS; GATE INSULATOR; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; LEAKAGE CURRENT DENSITY VOLTAGE CHARACTERISTICS; MOLECULAR OXYGEN; OCTANE; THERMAL ACTIVATION; ZIRCONIUM SILICATE;

THIN FILMS;

EID: 0036565312     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1467358     Document Type: Article

References (16)