Making silicon nitride film a viable gate dielectric

IEEE Transactions on Electron Devices

Volumn 45, Issue 3, 1998, Pages 680-690

  Ma, T P ^a  

^a Yale University   (United States)

Author keywords

Dielectric films; MOS capacitors; MOSFET's; Thin films; Ultra large scale integration; Vapor deposition

Indexed keywords

CAPACITORS; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; GATES (TRANSISTOR); INTERFACES (MATERIALS); MOSFET DEVICES; SEMICONDUCTING SILICON; SILICON NITRIDE; THIN FILMS; ULSI CIRCUITS;

FOWLER-NORDHEIM (F N) TUNNELING THEORY; JET VAPOR DEPOSITION (JVD);

DIELECTRIC FILMS;

EID: 0032024519     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.661229     Document Type: Article

References (29)

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