High resolution depth profiling in silicon oxynitride films using narrow nuclear reaction resonances

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 136-138, Issue , 1998, Pages 521-527

  Gosset, L G ^a   Ganem, J J ^a   Trimaille, I ^a   Rigo, S ^a   Rochet, F ^b   Dufour, G ^b   Jolly, F ^b   Stedile, F C ^c   Baumvol, I J R ^c  

^a CNRS   (France)

^b SORBONNE UNIVERSITÉ   (France)

^c FEDERAL UNIVERSITY OF RIO GRANDE DO SUL   (Brazil)

Author keywords

Isotopic tracing; Narrow nuclear resonances; Nitric oxide; Silicon oxynitride

Indexed keywords

CHEMICAL BONDS; COMPUTER SIMULATION; COMPUTER SOFTWARE; FILM GROWTH; HEAT TREATMENT; NITROGEN OXIDES; PRESSURE EFFECTS; RANDOM PROCESSES; RESONANCE; SILICON NITRIDE; SILICON WAFERS; X RAY PHOTOELECTRON SPECTROSCOPY;

NUCLEAR REACTION RESONANCE PROFILING (NRP) TECHNIQUE; SOFTWARE PACKAGE SPACES;

CERAMIC COATINGS;

EID: 0032018724     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(97)00731-3     Document Type: Article

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