Dielectric property of (TiO2)x-(Ta2O5)1-x thin films

Applied Physics Letters

Volumn 72, Issue 3, 1998, Pages 332-334

  Gan, J Y ^a   Chang, Y C ^a   Wu, T B ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000423421     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120746     Document Type: Article

References (8)

1. R. F. Cava, W. F. Peck, Jr., and J. J. Krajewski, Nature (London) 377, 215 (1995).
2. K. W. Kwon, C. S. Kang, S. O. Park, H. K. Kang, and S. T. Ahn, IEEE Trans. Electron Devices 43, 919 (1996).
3. W. S. Lau, K. K. Khaw, P. W. Qian, N. P. Sandler, and P. K. Chu, J. Appl. Phys. 79, 8841 (1996).
4. H. Shinriki and M. Nakata, IEEE Trans. Electron Devices 38, 455 (1991).
5. H. Shinriki, T. Kisu, S. I. Kimura, Y. Nishioka, Y. Kawamoto, and K. Mukai, IEEE Trans. Electron Devices 37, 1939 (1990).
6. S. G. Byeon and Y. Tzeng, IEEE Trans. Electron Devices 37, 972 (1990).
7. C. Hashimoto, H. Oikawa, and N. Honma, IEEE Trans. Electron Devices 36, 14 (1989).
8. S. C. Sun and T. F. Chen, Tech. Dig. Int. Electron Devices Meet., 333 (1994).