On the relationship between stress induced leakage currents and catastrophic breakdown in ultra-thin SiO2 based dielectrics

Microelectronic Engineering

Volumn 36, Issue 1-4, 1997, Pages 329-332

  Buchanan, D A ^a   Stathis, J H ^a   Cartier, E ^a   DiMaria, D J ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; DIELECTRIC FILMS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENT MEASUREMENT; INDUCED CURRENTS; LEAKAGE CURRENTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; STATISTICAL TESTS; STRESSES; ULTRATHIN FILMS; CAPACITORS; CRITICAL CURRENTS; CURRENT DENSITY; ELECTRON TUNNELING; GATES (TRANSISTOR); MOS DEVICES;

CATASTROPHIC BREAKDOWN; STRESS INDUCED LEAKAGE CURRENTS (SILC); CRITICAL DEFECT DENSITY; ELECTRON INJECTION;

CAPACITORS; ULTRATHIN FILMS;

EID: 0031150256     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(97)00075-0     Document Type: Article

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