Degradation of oxynitride gate dielectric reliability due to boron diffusion

Applied Physics Letters

Volumn 68, Issue 15, 1996, Pages 2094-2096

  Wristers, D ^a   Han, L K ^a   Chen, T ^a   Wang, H H ^a   Kwong, D L ^a   Allen, M ^b   Fulford, J ^b  

^a The University of Texas at Austin   (United States)

^b ADVANCED MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22244480327     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115595     Document Type: Article

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